Decrease in Interference Effects between Cells for Metal–Oxide–Nitride–Oxide–Silicon NAND Flash Memory Devices with Metal Spacer Layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. A Novel nand Flash Memory With Asymmetric S/D Structure Using Fringe-Field-Induced Inversion Layer
2. Flash Memory Device with `I' Shape Floating Gate for Sub-70 nm NAND Flash Memory
3. Performance of Silicon Nanocrystal Non-Volatile Memory Devices Under Various Programming Mechanisms
4. Fully integrated SONOS flash memory cell array with BT (body tied)-FinFET structure
5. A novel SONOS nonvolatile flash memory device using substrate hot-hole injection for write and gate tunneling for erase
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure;Japanese Journal of Applied Physics;2014-06-01
2. Force sensing micro-forceps with integrated fiber Bragg grating for vitreoretinal surgery;Optical Fibers and Sensors for Medical Diagnostics and Treatment Applications XII;2012-02-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3