Fully integrated SONOS flash memory cell array with BT (body tied)-FinFET structure-Reference-Cited by-同舟云学术

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Fully integrated SONOS flash memory cell array with BT (body tied)-FinFET structure

Published:2006-05 Issue:3 Volume:5 Page:174-179
ISSN:1536-125X
Container-title:IEEE Transactions On Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Suk-Kang Sung ,Tae-Yong Kim ,Eun Suk Cho ,Hye Jin Cho ,Byung Yong Choi ,Chang Woo Oh ,Byung-Kyu Cho ,Choong-Ho Lee ,Donggun Park

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/34226/01632130.pdf?arnumber=1632130

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Layer Etching of SiO₂ for Nanoscale Semiconductor Devices: A Review;Applied Science and Convergence Technology;2023-12-28

2. Demonstration of Thermally-Assisted Programming With High Speed and Improved Reliability for Junctionless Nanowire NOR Flash Memory;IEEE Transactions on Nanotechnology;2019

3. Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory;Japanese Journal of Applied Physics;2012-07-01

4. Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory;Japanese Journal of Applied Physics;2012-06-18

5. Physical noise model of a uniformly doped nanoscale FinFET photodetector;Optik;2012-06

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