Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=6/a=064306/pdf
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1. Organic Electrolyte Based Pulsed Nanoplating and Fabrication of Carbon Nanotube Network Transistors
2. Multilevel charging and discharging mechanisms of nonvolatile memory devices based on nanocomposites consisting of monolayered Au nanoparticles embedded in a polystyrene layer
3. A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells
4. Direct Field Effect of Neighboring Cell Transistor on Cell-to-Cell Interference of nand Flash Cell Arrays
5. Effects of floating-gate interference on NAND flash memory cell operation
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