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Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate Calibrated by Topography Simulation

  • Published:2011-08-22 Issue:8 Volume:50 Page:08KB03
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:en
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohmine Toshimitsu,Deshpande Vaibhav,Takada Hideki,Ikeda Tomoharu,Saito Hirokazu,Kawai Fumiaki,Hamada Kimimori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Precise and practical 3D topography simulation of high aspect ratio contact hole etch by using model optimization algorithm;Journal of Vacuum Science & Technology A;2024-06-10

2. Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation;Japanese Journal of Applied Physics;2019-05-30

3. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation);Advanced Etch Technology for Nanopatterning VI;2017-04-27

4. Pattern-generation and pattern-transfer for single-digit nano devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-11
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