Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal–Oxide–Semiconductor Field-Effect Transistor-Reference-Cited by-同舟云学术

Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal–Oxide–Semiconductor Field-Effect Transistor

Published:2011-04-20 Issue:4 Volume:50 Page:04DA14
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iwasaki Yuji,Nakamura Yoshiaki,Kikkawa Jun,Sato Motoki,Toyoda Eiji,Isogai Hiromichi,Izunome Koji,Sakai Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Germanium-on-insulator substrates by wafer bonding

2. High performance 70nm gate length germanium-on-insulator pMOSFET with high-k/metal gate

3. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

4. Characteristics of Germanium-on-Insulators Fabricated by Wafer Bonding and Hydrogen-Induced Layer Splitting

5. Evaluation of surface defects on SIMOX and their influences on device characteristics

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