Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon-Reference-Cited by-同舟云学术

Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

Published:2015-04 Issue: Volume:416 Page:21-27
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nam Ju Hyung,Alkis Sabri,Nam Donguk,Afshinmanesh Farzaneh,Shim Jaewoo,Park Jin-Hong,Brongersma Mark,Okyay Ali Kemal,Kamins Theodore I.,Saraswat Krishna

Funder

Korea Institute of Energy Technology Evaluation and Planning

Korea government Ministry of Knowledge Economy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference39 articles.

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4. Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si;Kobayashi;Thin Solid Films,2010

5. Defect reduction of selective Ge epitaxy in trenches on Si (001) substrates using aspect ratio trapping;Park;Appl. Phys. Lett.,2007

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