Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography-Reference-Cited by-同舟云学术

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Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

Published:2011-02-21 Issue:2 Volume:50 Page:026504
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakamura Naofumi,Oda Noriaki,Soda Eiichi,Aoyama Hajime,Tanaka Yuusuke,Kawamura Daisuke,Hosoi Nobuki,Takigawa Yukio,Shiohara Morio,Kondo Seiichi,Mori Ichiro,Saito Shuichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Total Performance of 32-nm-Node Ultralow-$k$/Cu Dual-Damascene Interconnects Featuring Short-TAT Silylated Porous Silica $(k = \hbox{2.1})$

2. High-Etching-Selectivity Barrier SiC (k<3.5) Film for 32-nm-Node Copper/Low-kInterconnects

3. A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13 µm Complementary Metal Oxide Semiconductor Generation

4. Selete's EUV program: progress and challenges

5. EUVL system: moving towards production

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical Patterning Performance in the Modified Layer Extraction Rule with an Image Sensor Device;Journal of Nanoscience and Nanotechnology;2017-10-01

2. Electrochemical study on metal corrosion in chemical mechanical planarization process;Japanese Journal of Applied Physics;2017-06-26

3. CD correction for half pitch 2x-nm on extreme ultraviolet lithography;SPIE Proceedings;2011-03-17

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