Different Resistive Switching Characteristics of a Cu/SiO$_{2}$/Pt Structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment;Applied Sciences;2019-04-05
2. Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory;Nanoscale Research Letters;2018-08-23
3. Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy;Memristor and Memristive Neural Networks;2018-04-04
4. Effects of a Graphene Oxide Layer on the Resistive Memory Properties of a Cu/GO/SiO2/Pt Structure;Sensors and Materials;2018
5. Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
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