Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer-Reference-Cited by-同舟云学术

Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer

Published:2016-03 Issue:2 Volume:34 Page:022204
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Kim Sungjun¹,Cho Seongjae²,Park Byung-Gook¹

Affiliation:

1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, South Korea

2. Department of Electronic Engineering, Gachon University, Gyeonggi-do 13120, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4943560

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