Funder
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference57 articles.
1. Lee MJ, Lee CB, Lee D, Lee SR, Chang M, Hur JH et al (2011) A fast, high endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures. Nat Mat 10:625–630
2. Luo W-C, Liu J-C, Feng H-T, Lin Y-C, Huang J-J, Lin K-L et al (2012) RRAM set speed-disturb dilemma and rapid statistical prediction methodology. IEEE Int Electron Devices Meet Tech Dig 9:5.1–5.4
3. Kim S, Chang YF, Kim M-H, Bang S, Kim TH, Chen YC, Lee J-H, Park B-G (2017) Ultralow power switching in silicon-rich SiNy/SiNx double-layer resistive memory device. Phys Chem Chem Phys 29:18988–18995
4. Ye C, Zhan C, Tsai TM, Chang KC, Chen MC, Chang TC et al (2014) Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon. Appl Phys Express 7:034101
5. Kim S, Jung S, Kim MH, Cho S, Park BG (2015) Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications. Appl Phys Lett 106:212106
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