Photoluminescence due to Inelastic Biexciton Scattering from an Al$_{0.61}$Ga$_{0.39}$N Ternary Alloy Epitaxial Layer at Room Temperature-Reference-Cited by-同舟云学术

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Photoluminescence due to Inelastic Biexciton Scattering from an Al$_{0.61}$Ga$_{0.39}$N Ternary Alloy Epitaxial Layer at Room Temperature

Published:2012-06-20 Issue:7 Volume:5 Page:072401
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Furutani Yujiro,Kittaka Ryo,Miyake Hideto,Hiramatsu Kazumasa,Yamada Yoichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=7/a=072401/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination dynamics and manybody effect of excitons in large-area monolayer MoS₂ capped with (111) NiO epitaxial layer;Journal of Physics: Condensed Matter;2024-05-08

2. Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells;Japanese Journal of Applied Physics;2021-12-01

3. Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates;Applied Physics Express;2021-11-22

4. Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K;Journal of Applied Physics;2018-05-28

5. Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61 Ga0.39 N Epitaxial Layer;physica status solidi (b);2018-01-24

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