Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K-Reference-Cited by-同舟云学术

Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K

Published:2018-05-28 Issue:20 Volume:123 Page:205705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Murotani Hideaki¹²^ORCID,Hayakawa Yuya¹,Ikeda Kazuki¹,Miyake Hideto³^ORCID,Hiramtsu Kazumasa³,Yamada Yoichi¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

2. Department of Computer Science and Electronic Engineering, National Institute of Technology, Tokuyama College, Gakuendai, Shunan, Yamaguchi 745-8585, Japan

3. Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5023996

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5. M. Kneissl , inIII-Nitride Ultraviolet Emitters: Technology and Applications, edited by M. Kneissl and R. Jens ( Springer International Publishing Switzerland, Cham, 2016), pp. 1–25.

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