Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61 Ga0.39 N Epitaxial Layer-Reference-Cited by-同舟云学术

Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61 Ga0.39 N Epitaxial Layer

Published:2018-01-24 Issue:5 Volume:255 Page:1700374
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Murotani Hideaki¹²^ORCID,Ikeda Kazuki²,Tsurumaru Takuto²,Fujiwara Ryota²,Kurai Satoshi²,Miyake Hideto³,Hiramatsu Kazumasa³,Yamada Yoichi²

Affiliation:

1. Department of Computer Science and Electronic Engineering; National Institute of Technology; Tokuyama College; Gakuendai Shunan 745-8585 Yamaguchi Japan

2. Department of Electrical and Electronic Engineering; Yamaguchi University; 2-16-1 Tokiwadai Ube 755-8611 Yamaguchi Japan

3. Department of Electrical and Electronic Engineering; Mie University; 1577 Kurimamachiya Tsu Mie 514-8507 Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Optical investigations of AlGaN on GaN epitaxial films

2. Linewidths of excitonic luminescence transitions in AlGaN alloys

3. Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

4. Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

5. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources

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