Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO$_{2}$ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors-Reference-Cited by-同舟云学术

Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO$_{2}$ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors

Published:2012-01-31 Issue:2 Volume:5 Page:021104
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Trinh Hai-Dang,Lin Yueh-Chin,Wang Huan-Chung,Chang Chia-Hua,Kakushima Kuniyuki,Iwai Hiroshi,Kawanago Takamasa,Lin Yan-Gu,Chen Chi-Ming,Wong Yuen-Yee,Huang Guan-Ning,Hudait Mantu,Chang Edward Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=2/a=021104/pdf

Reference22 articles.

1. The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

2. Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments

3. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

4. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

5. In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

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