Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric
Author:
Funder
Türkiye Bilimsel ve Teknolojik Araştırma Kurumu
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference52 articles.
1. High-K materials and metal gates for CMOS applications;Robertson;Mater. Sci. Eng. R Rep.,2015
2. High dielectric constant gate oxides for metal oxide Si transistors;Robertson;Rep. Prog. Phys.,2006
3. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films;Callegari;J. Appl. Phys.,2001
4. Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon;Sayan;Appl. Phys. Lett.,2005
5. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric;Ye;Appl. Phys. Lett.,2005
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