Effects of (NH4)2Sx-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE-Reference-Cited by-同舟云学术

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Effects of (NH4)2Sx-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE

Published:1990-07-20 Issue:Part 2, No. 7 Volume:29 Page:L1062-L1065
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wu Yi-hong,Kawakami Yoichi,Fujita Shizuo,Fujita Shigeo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling ZnSe/GaAs interface properties: The role of elemental exposure and photon irradiation during growth initiation;Journal of Applied Physics;2018-12-14

2. Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates;Vacuum;2000-05

3. Characterization of Epitaxial ZnSe/GaAs (100) Interface Properties and Their Control by (HF+Se)-Pretreatment;Japanese Journal of Applied Physics;1997-01-15

4. (2 × 6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation;Japanese Journal of Applied Physics;1996-11-15

5. Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces;Journal of Electronic Materials;1996-02

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