(2 × 6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation-Reference-Cited by-同舟云学术

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(2 × 6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation

Published:1996-11-15 Issue:Part 2, No. 11B Volume:35 Page:L1498-L1500
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suda Jun,Kawakami Yoichi,Fujita Shizuo,Fujita Shigeo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation;Surface Science;2011-10

2. Organopalladium catalyst on S-terminated GaAs(001)-(2×6) surface;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

3. Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface;Japanese Journal of Applied Physics;2002-11-01

4. Structure of anInAs(111)A−(2×2)Ssurface studied by scanning tunneling microscopy, photoelectron spectroscopy, and x-ray photoelectron diffraction;Physical Review B;2000-05-15

5. Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth;Journal of Crystal Growth;1997-05

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