Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation-Reference-Cited by-同舟云学术

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Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation

Published:2011-10 Issue:19-20 Volume:605 Page:1778-1783
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Merckling C.,Chang Y.C.,Lu C.Y.,Penaud J.,Brammertz G.,Scarrozza M.,Pourtois G.,Kwo J.,Hong M.,Dekoster J.,Meuris M.,Heyns M.,Caymax M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference31 articles.

1. Advanced Gate Stacks for High Mobility Semiconductors;Dimoulas,2007

2. Ge and III/V as Enabling Materials for Future CMOS Technologies

3. Capacitance-voltage characterization of GaAs–Al2O3 interfaces

4. Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing

5. Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

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1. GaAs Microdisk Lasers with Al₂O₃ Passivation Selectively Grown on SOI;ACS Photonics;2024-08-21

2. Molecular Beam Epitaxy for Steep Switching Tunnel FETs;Molecular Beam Epitaxy;2019-02-08

3. InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator;Applied Physics Letters;2014-11-03

4. Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-04-25

5. Study of Deformation in the Active Region of GaAs/GaAlAs Laser Diodes;Applied Mechanics and Materials;2013-07

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