Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates-Reference-Cited by-同舟云学术

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Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates

Published:2000-05 Issue:2 Volume:57 Page:163-169
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

L'vova T.V.,Sedova I.V.,Ulin V.P.,Sorokin S.V.,Solov'ev V.A.,Sitnikova A.A.,Berkovits V.L.,Ivanov S.V.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference12 articles.

1. Blue‐green laser diodes

2. Significant progress in II-VI blue-green laser diode lifetime

3. Growth mode and dislocation distribution in the ZnSe/GaAs (100) system

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanostructures on the ZnSe Surface: Synthesis, Morphological and Photoluminescent Properties;Physics and Chemistry of Solid State;2021-11-10

2. Mechanism of GaAs Surface Sulfidation;International Journal of Electrochemical Science;2014-12

3. Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide;Semiconductors;2013-05

4. Sulfide passivation of InAs(100) substrates in Na2S solutions;Physics of the Solid State;2009-06

5. Wet Chemical Treatment in Hydrazine-Sulfide Solutions for Sulfide and Nitride Monomolecular Surface Films on GaAs(100);Journal of The Electrochemical Society;2005

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