Controlling ZnSe/GaAs interface properties: The role of elemental exposure and photon irradiation during growth initiation
Author:
Affiliation:
1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
2. Korea Advanced Nano Fab Center, Suwon, Gyeonggi-do 16229, Republic of Korea
Funder
Basic Energy Sciences
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5053216
Reference39 articles.
1. Atomic and electronic structure of the GaAs/ZnSe(001) interface
2. Atomic diffusion‐induced deep levels near ZnSe/GaAs(100) interfaces
3. Optimal GaAs(100) substrate terminations for heteroepitaxy
4. ZnSe∕GaAs(001)heterostructures with defected interfaces: Structural, thermodynamic, and electronic properties
5. GaP-nucleation on exact Si (001) substrates for III/V device integration
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