AlGaN-Free Blue III–Nitride Laser Diodes Grown onc-Plane GaN Substrates-Reference-Cited by-同舟云学术

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AlGaN-Free Blue III–Nitride Laser Diodes Grown onc-Plane GaN Substrates

Published:2010-09-03 Issue:9 Volume:3 Page:092102
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Dorsaz Julien,Castiglia Antonino,Cosendey Gatien,Feltin Eric,Rossetti Marco,Duelk Marcus,Velez Christian,Carlin Jean-François,Grandjean Nicolas

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=9/a=092102/pdf

Reference15 articles.

1. True-blue InGaN laser for pico size projectors

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

4. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

5. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

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1. 480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region;Optics Express;2024-05-09

2. Designing of type-I AlN/GaN/InAlN quantum well heterostructure and investigating its optical characteristics;Optical and Quantum Electronics;2022-10-22

3. Performance improvement of InGaN-based laser grown on Si by suppressing point defects;OPT EXPRESS;2019

4. Performance improvement of InGaN-based laser grown on Si by suppressing point defects;Optics Express;2019-08-28

5. Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer;Superlattices and Microstructures;2018-10

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