InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm-Reference-Cited by-同舟云学术

InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm

Published:2011-04-12 Issue:5 Volume:4 Page:054201
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Terao Ryousuke,Kanazawa Toru,Ikeda Shunsuke,Yonai Yoshiharu,Kato Atsushi,Miyamoto Yasuyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=5/a=054201/pdf

Reference8 articles.

1. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

2. Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

3. Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs

4. Ion implantation of Si and Se donors in In0.53Ga0.47As

5. $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

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