Dislocation Climb inc-Plane AlN Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=6/a=065503/pdf
Reference21 articles.
1. Shear mode bulk acoustic wave resonator based on c-axis oriented AlN thin film
2. Single-Chip Multiple-Frequency ALN MEMS Filters Based on Contour-Mode Piezoelectric Resonators
3. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance
4. Band parameters for nitrogen-containing semiconductors
5. Transmission electron microscopy study of defects in AlN crystals with rough and smooth surface grains
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1. Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes;Journal of Applied Physics;2022-08-14
2. Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy;physica status solidi (a);2020-03-18
3. AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES;Doklady BGUIR;2019-12-07
4. Composition measurement of epitaxial ScxGa1−xN films;Semiconductor Science and Technology;2016-05-19
5. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes;Journal of Applied Physics;2015-10-07
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