Transmission electron microscopy study of defects in AlN crystals with rough and smooth surface grains
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. GaN, AlN, and InN: A review
2. Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates
3. Sublimation growth of aluminum nitride crystals
4. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
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1. Study of dislocations in AlN single-crystal using bright-field synchrotron x-ray topography under a multiple-beam diffraction condition;Applied Physics Letters;2020-08-31
2. Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy;Materials Express;2016-08-01
3. Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method;Applied Physics Express;2016-03-11
4. Polarity determination of rough and smooth surface grains in AlN crystals;Crystal Research and Technology;2012-10-25
5. Dislocation Climb inc-Plane AlN Films;Applied Physics Express;2011-06-09
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