Study of dislocations in AlN single-crystal using bright-field synchrotron x-ray topography under a multiple-beam diffraction condition-Reference-Cited by-同舟云学术

Study of dislocations in AlN single-crystal using bright-field synchrotron x-ray topography under a multiple-beam diffraction condition

Published:2020-08-31 Issue:9 Volume:117 Page:092102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yao Yongzhao¹^ORCID,Tsusaka Yoshiyuki²^ORCID,Ishikawa Yukari¹^ORCID,Sugawara Yoshihiro¹,Fujita Yu²,Matsui Junji³,Okada Narihito⁴^ORCID,Tadatomo Kazuyuki⁴^ORCID

Affiliation:

1. Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan

2. Graduate School of Material Science, University of Hyogo, 3-2-1, Koto, Kamigori, Ako, Hyogo 678-1297, Japan

3. Synchrotron Radiation Nanotechnology Center, University of Hyogo, Tatsuno, Hyogo 679-5165, Japan

4. Graduate School of Sciences and Technology for Innovation, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0015108

Reference25 articles.

1. GaN, AlN, and InN: A review

2. III–nitrides: Growth, characterization, and properties

3. Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy

4. Wet etching of GaN, AlN, and SiC: a review

5. Wet KOH etching of freestanding AlN single crystals

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