X-ray topography of crystallographic defects in wide-bandgap semiconductors using a high-resolution digital camera

Abstract

Abstract A high-resolution CMOS camera equipped with a scintillator and relay lenses was used to record X-ray topographic images of wide-bandgap semiconductor wafers, including 4H-SiC, GaN, AlN, and β-Ga2O3. The images were compared with those recorded with nuclear emulsion plates (NEPs) and a CCD camera at the same sample site. Fine structures of dislocation contrasts, which allowed for accurate identification of the dislocation types, could be observed using the CMOS camera. The results suggest that the CMOS camera can provide high-quality images that are comparable with the NEPs; hence, the reported approach is a promising one for real-time dislocation observation in power devices under operation.