Studies on the Influences ofi-GaN,n-GaN,p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors-Reference-Cited by-同舟云学术

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Studies on the Influences ofi-GaN,n-GaN,p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors

Published:2005-05-10 Issue:5A Volume:44 Page:2953-2960
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Arulkumaran Subramaniam,Egawa Takashi,Ishikawa Hiroyasu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study;Applied Physics Letters;2024-05-13

2. Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs;Micromachines;2024-04-26

3. Analysis of High Frequency AlGaN/GaN-Based HEMT for Resistive Load Inverter;Lecture Notes in Electrical Engineering;2024

4. Dynamic Behavior of Threshold Voltage and I _D–V _DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect;IEEE Transactions on Electron Devices;2023-12

5. Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures;Journal of Crystal Growth;2023-12

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