Hydrogen Dissociation from Mg-doped GaN-Reference-Cited by-同舟云学术

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Hydrogen Dissociation from Mg-doped GaN

Published:2004-01-13 Issue:1 Volume:43 Page:23-29
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakagawa Yoshinori,Haraguchi Masanobu,Fukui Masuo,Tanaka Shinji,Sakaki Atsushi,Kususe Ken,Hosokawa Naoki,Takehara Takae,Morioka Yasushi,Iijima Hiroshi,Kubota Masaru,Abe Masatoshi,Mukai Takashi,Takagi Hironori,Shinomiya Gen-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=1R/a=23/pdf

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiO₂‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors;physica status solidi (a);2024-07

2. MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices;2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2023-11-16

3. Effect of Mg doping on carrier recombination in GaN;Journal of Applied Physics;2023-08-22

4. Slow optical response of semi-insulating GaN film studied by terahertz emission and photoluminescence spectroscopy;Journal of Applied Physics;2022-05-14

5. On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters;Semiconductor Science and Technology;2021-11-26

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