MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices-Reference-Cited by-同舟云学术

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MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices

Published:2023-11-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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Author:

Yamamoto Akio¹,Baratov Ali¹,Asubar Joel T.¹,Kuzuhara Masaaki²

Affiliation:

1. University of Fukui,Graduate School of Engineering,Fukui,Japan

2. Kwansei Gakuin University,Graduate School of Science and Technology,Sanda,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10366231/10366326/10366345.pdf?arnumber=10366345

Reference20 articles.

1. Depth and thermal stability of dry etch damage in GaN Schottky diodes

2. Schottky diode measurements of dry etch damage inn- andp-type GaN

3. Reactive ion etch damage on GaN and its recovery

4. Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

5. Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas

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