Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces-Reference-Cited by-同舟云学术

Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Published:2014-11-18 Issue:5 Volume:212 Page:1075-1080
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yatabe Zenji¹²,Asubar Joel T.¹²,Sato Taketomo¹,Hashizume Tamotsu¹²

Affiliation:

1. Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE); Hokkaido University; Sapporo 060-8628 Japan

2. Japan Science and Technology Agency (JST); CREST; Chiyoda Tokyo 102-0075 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431652/fullpdf

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