Slow optical response of semi-insulating GaN film studied by terahertz emission and photoluminescence spectroscopy-Reference-Cited by-同舟云学术

Slow optical response of semi-insulating GaN film studied by terahertz emission and photoluminescence spectroscopy

Published:2022-05-14 Issue:18 Volume:131 Page:185706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Murakami Fumikazu¹^ORCID,Mannan Abdul¹^ORCID,Serita Kazunori¹^ORCID,Murakami Hironaru¹^ORCID,Tonouchi Masayoshi¹^ORCID

Affiliation:

1. Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan

Abstract

We report the terahertz emission spectroscopy (TES) and photoluminescence (PL) spectroscopy results for a semi-insulating (SI) GaN film in comparison with those for unintentionally doped (UID) and magnesium (Mg)-doped ones. The TES and PL results showed notable slow changes on a time scale of approximately 10 s for the SI and UID GaN films, but not for the Mg-doped GaN film upon femtosecond ultraviolet laser illumination. The origin of the slow responses of the TES and PL spectra was studied by observing them under ambient air and vacuum conditions and attributed to hydrogen dissociation from GaN as a result of optical excitation.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0086788

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