Terahertz emission spectroscopy on Eu-doped GaN superlattice LEDs
Author:
Affiliation:
1. Osaka University, 2-6 Yamada-oka, Suita,Institute of Laser Engineering,Osaka,Japan,565-0871
2. Osaka University, 2-1 Yamada-oka, Suita,Graduate School of Engineering,Osaka,Japan,565-0871
3. Lehigh University,Department of Physics,Bethlehem,PA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299158.pdf?arnumber=10299158
Reference12 articles.
1. Terahertz Emission Functionality of High‐Temperature Superconductors and Similar Complex Systems
2. Rapid, noncontact, sensitive, and semiquantitative characterization of buffered hydrogen-fluoride-treated silicon wafer surfaces by terahertz emission spectroscopy
3. Simplified formulas for the generation of terahertz waves from semiconductor surfaces excited with a femtosecond laser
4. Ultrafast spatiotemporal photocarrier dynamics near GaN surfaces studied by terahertz emission spectroscopy
5. Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing
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