Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO2/Yttria-Stabilized Zirconia Buffer Layer in Metal/Ferroelectric/Insulator/Semiconductor Structure-Reference-Cited by-同舟云学术

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Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO2/Yttria-Stabilized Zirconia Buffer Layer in Metal/Ferroelectric/Insulator/Semiconductor Structure

Published:2001-01-15 Issue:Part 1, No. 1 Volume:40 Page:281-284
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamada Tomoaki,Wakiya Naoki,Shinozaki Kazuo,Mizutani Nobuyasu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanostructure and strain analysis of CeO2/YSZ strained superlattice;Materials Science and Engineering: B;2010-10

2. Single domain epitaxial growth of yttria-stabilized zirconia on Si(111) substrate;Ceramics International;2008-05

3. Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics;Materials Science and Engineering: B;2008-02

4. Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111);Japanese Journal of Applied Physics;2006-12-15

5. Stress Control and Ferroelectric Properties of Lead Zirconate Titanate (PZT) Thin Film on Si Substrate with Buffer Layers;Japanese Journal of Applied Physics;2005-09-22

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