Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Physical and electrical properties of yttria-stabilized zirconia epitaxial thin films deposited by ion beam sputtering on silicon
2. Alternative dielectrics to silicon dioxide for memory and logic devices
3. RF-magnetron-sputtered heteroepitaxial YSZ and CeO2/YSZ/Si(001) thin films with improved capacitance–voltage characteristics
4. Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO2)1-x(Y2O3)xBuffer Layer
5. Characterization of $\bf Pb(Zr_{\ninmbi x}Ti_{1-{\ninmbi x}})O_{3}$ Thin Film on Silicon Substrate with Heteroepitaxial Yttria-Stabilized Zirconia (YSZ) Buffer Layer
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3. Investigation of Optical, Electrical, and Mechanical Properties of MOCVD-grown ZrO2Films;Chemical Vapor Deposition;2014-09
4. Structural, optical and electrical properties of high-k ZrO2 dielectrics on Si prepared by plasma assisted pulsed laser deposition;Thin Solid Films;2012-08
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