Detection of EL2 in Undoped LEC GaAs by a Novel Variation of Photo-Induced Transient Spectroscopy-Reference-Cited by-同舟云学术

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Detection of EL2 in Undoped LEC GaAs by a Novel Variation of Photo-Induced Transient Spectroscopy

Published:1987-08-20 Issue:Part 1, No. 8 Volume:26 Page:1388-1389
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Blight S. R.,Page A. D.,Ladbrooke P. H.,Thomas H.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Traps in undoped semi‐insulating InP obtained by high temperature annealing;Journal of Applied Physics;1996-05-01

2. Impact of thermal treatments on deep level behaviour in semi-insulating GaAs;Materials Science and Engineering: B;1994-01

3. Effects of electrode geometry and polarity on the occurrence of negative peaks in optical transient current spectroscopy applied to semi-insulating gallium arsenide;Journal of Electronic Materials;1992-09

4. A comparison of picts with direct measurements of non-exponential current transients on Si-GaAs;Solid State Communications;1991-02

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