Traps in undoped semi‐insulating InP obtained by high temperature annealing-Reference-Cited by-同舟云学术

Traps in undoped semi‐insulating InP obtained by high temperature annealing

Published:1996-05-01 Issue:9 Volume:79 Page:6947-6950
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Marrakchi G.¹,Cherkaoui K.¹,Karoui A.²,Hirt G.³,Müller G.³

Affiliation:

1. Laboratoire Physique de la matière (URA CNRS 358), Institut National des Sciences Appliquées de Lyon Bât 502, 20 Avenue A. Einstein, 69621 Villeurbanne Cédex, France

2. Institut National de la Recherche Scientifique et Technique, B.P: 95‐2050 Hammamlif, Tunisia

3. Institut für Werkstoffwissenschaften, LS6, Universität Erlangen‐Nürnberg, Martensstrasse 7, D‐91058 Erlangen, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference23 articles.

1. D. E. Holmes, R. G. Wilson, and P. W. Yu, J. Appl. Phys. 52, 7409 (1981).JAPIAU0021-8979

2. P. B. Klein, R. L. Henry, T. A. Kennedy, and N. D. Wilsey, in Defects in Semiconductors, edited by H. J. von Bardeleben, Materials Science Forum Vol. 10–12 (Trans Tech Publ. Ltd., Switzerland, 1986), p. 1259.

3. D. Hofmann, G. Müller, and N. Streckfuss, Appl. Phys. A 48, 315 (1989).APAMFC0947-8396

4. K. Kainosho, H. Shimakura, H. Yamamoto, and O. Oda, Appl. Phys. Lett. 59, 932 (1991).APPLAB0003-6951

5. R. Hirano and T. Kanazawa, J. Cryst. Growth 106, 531 (1990).JCRGAE0022-0248

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