Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=12/a=124101/pdf
Reference13 articles.
1. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates
2. 12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
3. Power electronics on InAlN/(In)GaN: Prospect for a record performance
4. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures
5. Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
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1. Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate;Journal of Electronic Materials;2024-07-13
2. Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer;Semiconductor Science and Technology;2024-07-11
3. Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2024-06
4. Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes;Applied Physics Express;2023-12-01
5. Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs;Applied Physics Letters;2023-10-02
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