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Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

  • Published:2012-04-20 Issue: Volume:51 Page:04DC06
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:en
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Feng Wei,Hettiarachchi Ranga,Sato Soshi,Kakushima Kuniyuki,Niwa Masaaki,Iwai Hiroshi,Yamada Keisaku,Ohmori Kenji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum-Dot-Based Thermometry Using 12-nm FinFET and Machine Learning Models;IEEE Transactions on Electron Devices;2024-03

2. Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs;Solid-State Electronics;2021-10

3. Cost-Effective Fabrication of Fractal Silicon Nanowire Arrays;Nanomaterials;2021-07-31

4. Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review;Nanomaterials;2021-02-03

5. Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?;2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2020-09-01
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