Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors-Reference-Cited by-同舟云学术

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Published:2011-05 Issue:5 Volume:51 Page:879-884
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Sato Soshi,Kakushima Kuniyuki,Ahmet Parhat,Ohmori Kenji,Natori Kenji,Yamada Keisaku,Iwai Hiroshi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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2. Bidal G, Boeuf F, Denorme S, Loubet N, Huguenin JL, Perreau P, et al. High velocity Si-nanodot: a candidate for SRAM applications at 16nm node and below. In: Tech dig symp of VLSI tech; 2009. p. 240–1.

3. Chen J, Saraya T, Miyaji K, Shimizu K, Hiramoto T. Experimental study of mobility in [110]- and [100]-directed multiple silicon nanowire GAA MOSFETs on (100) SOI. In: Tech dig symp of VLSI tech; 2008. p. 32–3.

4. Chen J, Saraya T, Hiramoto T. High hole mobility in multiple silicon nanowire gate-all-around pMOSFETs on (110) SOI. In: Tech dig symp of VLSI tech; 2009. p. 90–1.

5. Measurement of carrier mobility in silicon nanowires;Gunawan;Nano Lett,2008

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