Nucleation and Crystal Growth of Si$_{1-x}$Ge$_{x}$ Melts during Rapid Cooling Processes: A Molecular-Dynamics Study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
2. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
3. Mobility and threshold-voltage comparison between [110]- and (100)-oriented ultrathin-body silicon MOSFETs
4. Giant Ge-on-Insulator Formation by Si–Ge Mixing-Triggered Liquid-Phase Epitaxy
5. High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth;Applied Physics Letters;2014-09-08
2. Self-Organized Travelling-Zone-Melting Growth of a-Ge/Sn/c-Ge Stacked-Structures for High-Quality GeSn;ECS Journal of Solid State Science and Technology;2014
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