Giant Ge-on-Insulator Formation by Si–Ge Mixing-Triggered Liquid-Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=4/a=045503/pdf
Reference12 articles.
1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
2. Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices*
3. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
4. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
5. Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate
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