Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2374849
Reference8 articles.
1. Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films
2. Nucleation site location and its influence on the microstructure of solid-phase crystallized SiGe films
3. Boron‐Doped Polycrystalline Si x Ge1 − x Films: Dopant Activation and Solid Solubility
4. Ge fraction dependent improved thermal stability ofin situdoped boron in polycrystalline Si1−xGex (0⩽x⩽0.5) films on SiON
5. Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing
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