Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth
Author:
Affiliation:
1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
2. JSPS Research Fellow, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan
Funder
Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4895512
Reference21 articles.
1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
2. Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
3. Impact of Plasma Postoxidation Temperature on the Electrical Properties of ${\rm Al}_{2}{\rm O}_{3}/{\rm GeO}_{x}/{\rm Ge}$ pMOSFETs and nMOSFETs
4. Ge-on-Si optoelectronics
5. Fast Light-Emitting Silicon-Germanium Nanostructures
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3. Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin;ECS Journal of Solid State Science and Technology;2020-07-17
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