Self-Organized Travelling-Zone-Melting Growth of a-Ge/Sn/c-Ge Stacked-Structures for High-Quality GeSn-Reference-Cited by-同舟云学术

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Self-Organized Travelling-Zone-Melting Growth of a-Ge/Sn/c-Ge Stacked-Structures for High-Quality GeSn

Published:2014 Issue:10 Volume:3 Page:P340-P343
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Matsumura Ryo,Kinoshita Yuki,Tojo Yuki,Sadoh Taizoh,Nishimura Tomoaki,Miyao Masanobu

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Fully Silicided NiSi:Hf–LaAlO<tex>$_3$</tex>/SG–GOI n-MOSFETs With High Electron Mobility

2. Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

3. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

4. Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

5. Ge1−Sn stressors for strained-Ge CMOS

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures;Journal of Applied Physics;2015-09-07

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