64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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2. Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors
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5. Characterization of Pt∕SrBi2Ta2O9∕Hf–Al–O∕Si field-effect transistors at elevated temperatures
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