Characterization of Pt∕SrBi2Ta2O9∕Hf–Al–O∕Si field-effect transistors at elevated temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2399351
Reference18 articles.
1. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
2. Metal–Ferroelectric–Insulator–Semiconductor Memory FET With Long Retention and High Endurance
3. Pt/SrBi2Ta2O9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching
4. Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention
5. Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2Buffer Layers
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