Enhanced Endurance and Imprint Properties in Hf0.5Zr0.5O2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy
Author:
Affiliation:
1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710126, China
2. School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Funder
Basic and Applied Basic Research Foundation of Guangdong Province
China Postdoctoral Science Foundation
Fundamental Research Funds for the Central Universities
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00756
Reference38 articles.
1. Enhanced ferroelectricity in ultrathin films grown directly on silicon
2. Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors
3. Orientation Independent Growth of Uniform Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films on Silicon for High‐Density 3D Memory Applications
4. First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs
5. Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption
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1. In Situ Modulation of Oxygen Vacancy Concentration in Hf0.5Zr0.5O2−x Thin Films and the Mechanism of Its Impact on Ferroelectricity;Coatings;2024-09-02
2. Sub-5nm Al-doped HfO2 ferroelectric thin films compatible with 3D NAND process;Journal of Alloys and Compounds;2024-09
3. Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film;Applied Physics Letters;2024-08-12
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