Oxygen vacancy effects on polarization switching of ferroelectric <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>FeCrO</mml:mi><mml:mn>6</mml:mn></mml:msub></mml:mrow></mml:math> thin films-Reference-Cited by-同舟云学术

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Oxygen vacancy effects on polarization switching of ferroelectric Bi2FeCrO6 thin films

Published:2024-05-21 Issue:5 Volume:8 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Henning X.¹^ORCID,Alhada-Lahbabi K.²,Deleruyelle D.²^ORCID,Gautier B.²,Schlur L.¹,Fix T.³^ORCID,Colis S.¹^ORCID,Dinia A.¹,Rastei M. V.¹^ORCID

Affiliation:

1. Institut de Physique et Chimie des Matériaux de Strasbourg

2. Université Claude Bernard Lyon 1

3. Université de Strasbourg

Funder

Agence Nationale de la Recherche

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.054416/fulltext

Reference63 articles.

1. Synergistic Effect of Singly Charged Oxygen Vacancies and Ligand Field for Regulating Transport Properties of Resistive Switching Memories

2. Interface-induced nonswitchable domains in ferroelectric thin films

3. Progress in BiFeO3-based heterostructures: materials, properties and applications

4. Role of oxygen vacancies on the low-temperature dielectric relaxor behavior in epitaxial Ba0.85Ca0.15Ti0.9Zr0.1O3 thin films

5. Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi2FeCrO6 Thin Film

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen vacancy effects on polarization switching of ferroelectric Bi2FeCrO6 thin films;Physical Review Materials;2024-05-21

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