Effect of Dielectrics on Hydrogen Detection Sensitivity of Metal–Insulator–Semiconductor Pt–GaN Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
1. Hydrogen response mechanism of Pt–GaN Schottky diodes
2. Electroreflectance spectroscopy of Pt∕AlGaN∕GaN heterostructures exposed to gaseous hydrogen
3. A hydrogen−sensitive MOS field−effect transistor
4. High temperature Pt Schottky diode gas sensors on n-type GaN
5. Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
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1. Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen;ECS Journal of Solid State Science and Technology;2024-04-01
2. Temperature dependence of sensing properties of hydrogen-sensitive extended-base heterojunction bipolar transistors;International Journal of Hydrogen Energy;2022-11
3. Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates;Japanese Journal of Applied Physics;2021-06-01
4. Effect of hydrogen on Pt/GaN Schottky diodes;Japanese Journal of Applied Physics;2020-11-09
5. Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer;Sensors;2018-06-28
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