Author:
Irokawa Yoshihiro,Ohki Tomoko,Nabatame Toshihide,Koide Yasuo
Abstract
Abstract
Hydrogen-induced changes in the characteristics of Pt/GaN rectifiers fabricated on bulk GaN were studied using current–voltage (I–V), capacitance–voltage (C–V), and impedance spectroscopy measurements. The results were similar to those for Pt/GaN rectifiers fabricated on sapphire substrates [Y. Irokawa, Jpn. J. Appl. Phys. 59, 120901 (2020)]. That is, an ambient H2 atmosphere reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region, suggesting that the quality of the GaN layers was not the origin of the observed H2-induced changes.
Funder
JSPS KAKENHI
Ministry of Education, Culture, Sports, Science and Technology
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering